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W-CDMA手机用功放的临道泄漏的低频因素分析 被引量:1

Analysis of Influence of Low Frequency Factor to Adjacent Channel Power Leakage of Power Amplifier Used for W-CDMA Handset
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摘要 分析了W-CDMA移动终端用功率放大器在AB类工作状态下由低频因素引起的非线性失真的机理,利用频域分析的方法建立了放大器的数学模型。通过模型计算了低频因素和三次交调对临近信道功率泄漏的影响,实验结果表明大功率输出时低频因素引起的临近信道功率比的恶化可达3.4dB。 A distortion mechanism of power amplifier (PA) operating at class AB state caused by low frequency factor is analyzed. A mathematic model of PA used for Wide-band CDMA (W-CDMA) is set up with the analysis of the output signal in frequency domain. The factors of low frequency and third intermodulation (IM3) for Adjacent Channel Power Leakage (ACPL) are deduced from the former model. The result of measurement proves that the effect of low frequency on Adjacent Channel Power Ratio (ACPR) is up to 3. 4 dB at high output power level.
出处 《电子器件》 EI CAS 2006年第2期476-479,共4页 Chinese Journal of Electron Devices
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参考文献7

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同被引文献5

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