射频磁控溅射制备(Pb,La)TiO_3薄膜的结晶性能与铁电畴初步研究

Preliminary Study of Ferroelectric Domains of(Pb,La)TiO_3 Films Grown by RF Magnetron Sputtering

采用射频磁控溅射技术在Pt/Ti/SiO2/Si衬底制备了(Pb,La)TiO3(简记为PLT)铁电薄膜。利用XRD对PLT薄膜的结晶性能进行了研究。实验结果表明,在一定的制备工艺条件下,可以制备出完全钙钛相的PLT铁电薄膜。PLT铁电薄膜的结晶性能与溅射的工作气压、氧氩比、退火温度等关系密切;PFM表明PLT薄膜的电畴具有180°结构。

Microstructures and ferroelectric domains of （Pb,La） TiO3[PLT]films,grown by RF magnetron sputtering and annealed at 600℃ for 60min ,were characterized with X-ray diffraction（XRD） and piezo-response force microscopy（PFM）.The results show that under optimum growth conditons,pure perofskite phase forms in the PLT films,Various factors,including sputtering pressure,the ratio of oxygen and argon in the gas mixture and annealing temperature,setrongly affect crystal structure of the films,Moreover,PFM images indicate that the 180° domain dominates in the PLT films.