摘要
采用射频磁控溅射,用Al靶和Ti靶同时溅射沉积(Ti,Al)N薄膜。研究表明:不同Al靶功率沉积的薄膜中始终存在面心立方结构(B1型),当Al靶功率大于250 W薄膜中面心立方结构(B1型)和六方结构(B4型)共存。随Al成分的增加,B1型结构晶格常数减小,薄膜择优取向由B1型(111)向B4型(002)转变。薄膜表面随Al靶功率增加分别呈岛状、纤维状和柱状增长。(Ti,Al)N薄膜的硬度随Al靶功率的增加呈上升趋势。等离子体发射光谱分析显示,在相同工艺条件下Al靶比Ti靶先进入非金属态溅射模式,导致在相同功率下Al溅射速率低于Ti溅射速率。
(Ti,Al)N films were grown by RF masnetron co-sputtering with Ti and Al targets aligned at the opposite positions.The morphology and mechanical properties of the films were characterized with X-ray diffraction (XRD) ,atomic force microscopy (AFM) and tribo-indenter, respectively. The results show that the sputtering power of the Al target significantly affects the microstructures of the films. For instance, when the power is high than 250W, coexistence of cubic (B1) and hexagonal (B4) structures was observed;as Al concentration increases,B1 lattice constant shrinks and the preferred growth orientation shifts from 〈111〉 B1 to 〈002〉 B4.As power of the Al target increases,graln shapes on the surface change from island to fiber and to columar. Beaides, the smface hardness also increases. We found that under the same film growth conditions,Al target displays nonmetallic sputtering much faster than Ti target, resulting in lower Al deposition rate.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2006年第2期142-146,共5页
Chinese Journal of Vacuum Science and Technology