离子注入结合无杂质空位诱导量子阱混合的研究

The Combination of Ion Induced Composition Disordering and Impurity- Free Vacancy Disordering to for Quantum Well Intermixing

离子注入诱导无序（IICD）和无杂质空住扩散（IFVD）方法是在同一基片上生长量子阱以后再导致部分区域量子阱混合（QWI）的重要方法。本文采用磷离子注入（注入能量为160keV，剂量分别为1×10^11，1×10^12，1×10^13，3×10^13，7×10^14ion／cm^2）和用无杂质空位扩散（PECVD 200nm SiO2电介质膜）相结合的方法来实现InGaAsP／InP多量子阱的混合（高纯氮保护下进行快速热退火，退火温度为780℃，退火时间为30s）。同时，和相同条件下纯磷离子注入诱导混和结果进行了比较。试验发现，先用PECVD镀200nm的SiO2电介质膜再进行磷离子注入的方法造成的带隙蓝移值比在同样条件下纯离子注入方法小，而先进行磷离子注入在用覆盖200nm的SiO2电介质膜造成的带隙蓝移值比在同样条件下纯离子注入方法稍大。说明，离子注入造成的缺陷比介质膜SiO2中的缺陷多。带隙兰移主要由离子注入引起。但用两种方法结合时，SiO2中的缺陷也起到促进作用。

Implantation Induced Composition Disordering （IICD） and Impurity- Free Vacancy Disordering （IFVD） are two important methods for quantum well intermixing （QWI） after having grown quantum- well structures by MBE on the same wafer. In this paper, the IICD, phosphorus ion implantation was performed at the energy of 160key, with the dose range from 1×10^11 to 1×10^13 ion/cm^2, and the IFVD （200nm SiO2 films was grown by PECVD） were combined to produce InGaAsP/InP multiple - quantum -well intermixing. The following Rapid thermal annealing （RTA） was performed at 780℃ under pure nitrogen protection for 30 seconds. The results indicate that the blue - shift of photoluminescence （PL） peak, caused by SiO2 films as protection film before ion implantation, is much less than that of induced by phosphorus ion implantation. However, the blue - shift of PL peak caused by SiO2 films as a post annealing capping layer after phosphorus ion implantation is slightly larger than that caused by ion implantation only. These show that the defects generated by ion implantation is much more than that in SiO2 films. So, the band gap blue - shift is resulted mainly from ion implantation. However, the combination of IICD and IFVD results in larger band gap blue shift which may be promoted by the defects existed in SiO2 films.