摘要
提出一种解释GaAsPCSS中非线性过程的理论模型,其要点是:1)超快激光脉冲在强场下对GaAsPCSS注入电子—空穴对,形成偶极畴;2)偶极畴在电场作用下引入空间电场畸变,建立起发生碰撞电离的势垒区;3)碰撞电离激发引起载流子倍增及电致发光过程,自吸收使得载流子产生的行进速度加快;4)移至电极处的势垒区使器件呈现Lock—on现象。上述过程的计算结果能很好地解释有关实验现象。
s pcss's has been proposed. The main points include: 1) electron-hole pairs activated by ultrafast laserpulse under high biased field form a dipole charge domain; 2) the space field of the dipole domain results in ionization; 3) the impact ionization leads to amplification of carriers and luminous process,self - absorption of GaAs makes ioning fronts propagate with velocity faster than electrondriftone; 4) the reverse biased barrier near the anods supports the lock on phenomenon.The computation results coincide well with the experiment results.
出处
《高电压技术》
EI
CAS
CSCD
北大核心
1996年第3期3-5,共3页
High Voltage Engineering
基金
国家自然科学基金
关键词
光电导开关
高倍增模式
开关
PCSS's high gain model pulsed power technology.