光电导开关的载流子倍增机理

A theoretical model for nonlinear process of high - gian Ga

提出一种解释ＧａＡｓＰＣＳＳ中非线性过程的理论模型，其要点是：１）超快激光脉冲在强场下对ＧａＡｓＰＣＳＳ注入电子—空穴对，形成偶极畴；２）偶极畴在电场作用下引入空间电场畸变，建立起发生碰撞电离的势垒区；３）碰撞电离激发引起载流子倍增及电致发光过程，自吸收使得载流子产生的行进速度加快；４）移至电极处的势垒区使器件呈现Ｌｏｃｋ—ｏｎ现象。上述过程的计算结果能很好地解释有关实验现象。

s pcss's has been proposed. The main points include: 1) electron-hole pairs activated by ultrafast laserpulse under high biased field form a dipole charge domain; 2) the space field of the dipole domain results in ionization; 3) the impact ionization leads to amplification of carriers and luminous process,self - absorption of GaAs makes ioning fronts propagate with velocity faster than electrondriftone; 4) the reverse biased barrier near the anods supports the lock on phenomenon.The computation results coincide well with the experiment results.