CuO和V_2O_5掺杂对ZnNb_2O_6陶瓷介电性能的影响

EFFECT OF CuO AND V_2O_5 DOPING ON DIELECTRIC PROPERTIES OF ZnNb_2O_6 CERAMICS

采用传统的固相反应法制备了CuO和V2O5掺杂的ZnNb2O6介质陶瓷。通过X射线衍射,扫描电镜以及电感–电容–电阻测试仪等测试手段对其烧结特性,晶体结构,微观形貌和介电性能进行研究。结果表明:CuO和V2O5掺杂能降低ZnNb2O6陶瓷的烧结温度,影响相结构,改变微观形貌并优化介电性能。掺杂质量分数为0.25%CuO和0.25%V2O5的ZnNb2O6陶瓷样品在1025℃烧结后,在100MHz下具有较好的综合介电性能:介电常数εr=35,介电损耗tanδ=0.00021,频率温度系数τf=-44.41×10-6/℃。

Dielectric ceramics ZnNb2O6 doped with CuO and V2O5 were prepared by conventional mixed solid method. Their sintering characteristics, crystal structure, microstructure, and dielectric properties were analyzed by X-ray diffraction, scanning electron microscope and inductance - capacitance - resistance analyzer, The results reveal that CuO and V2O5 additives can lower the sintering temperature, affect the phase structure, change the micro-morphologies and improve the dielectric properties. The ZnNb206 ceramics doped with mass fraction of 0.25% CuO and 0.25 % V205 sintered at 1 025 ℃ have the optimal dielectric properties： dielectric constant εr = 35, dissipation factor tanS=0.000 21, temperature coefficient of resonance frequency rf = -44.41×10^-6/℃.