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低温烧结PZT–0.5%PbO·WO_3压电陶瓷 被引量:9

LOW TEMPERATURE SINTERED PZT–0.5%PbO WO_3 PIEZOELECTRIC CERAMICS
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摘要 以固态氧化物为原料,采用一次合成工艺制备锆钛酸铅(leadzirconatetitanate,PZT)–0.5%PbOWO3压电陶瓷,研究摩尔比n(Zr)/n(Ti)、烧结温度对陶瓷性能的影响。结果发现:合成温度900℃保温2h可以得到钙钛矿结构压电陶瓷。n(Zr)/n(Ti)=1.08时,烧结温度为1100℃保温2h,压电陶瓷的综合性能在准同型相界处达最佳:介电常数ε3T3/ε0=1593,介电损耗tg?=0.019,压电系数d33=363.5×10-6C/N,机电耦合系数Kp=0.596,机械品质因数Qm=88.4。 Lead zircouate titanate(PZT) - 0.5%PbO·WO3 piezoelectric ceramics were prepared by the one-stage technique with solid oxides as raw materials. The effects of Zr content and sintering temperature on the properties of the ceramic were studied. The results showed that a pure perovskitic structure was obtained when ceramics were calcined at 900 ℃ for 2 h,and a well-situated property at the morphotropic phase boundary was observed. The optimized properties, dielectric constant ε33TT/ε0=1 593 =1 593, dielectric dissipation tgδ = 0.019, piezoelectric coefficients d33 =363.5×10^-6 C/N, electromechanical coupling coefficient Kp = 0.596 and mechanical quality factor Qm =8 8.4, were obtained with n(Zr)/n(Ti)= 1.08 when sintering was carried out at 1 110 ℃ for 2 h.
出处 《硅酸盐学报》 EI CAS CSCD 北大核心 2006年第4期476-478,共3页 Journal of The Chinese Ceramic Society
关键词 压电陶瓷 低温烧结 三氧化钨 电性能 piezoelectric ceramics low temperature sintering tungsten oxide electric-properties
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参考文献4

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二级参考文献7

  • 1董敦灼,陈旭明,熊茂仁.低温烧结PZT压电陶瓷材料[J].电子元件与材料,1989,8(1):58-60. 被引量:11
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