BCN薄膜XPS结构分析时荷电效应的校正

Correction of Charging Effect on Structure Analyse of BCN Films by XPS

采用X射线光电子谱(XPS)对BCN非晶纳米薄膜的结构进行表征。分别采用氩峰、污染碳和沉积单层金3种元素峰位来校正在XPS测试过程中由荷电效应引起的峰位移动,并与傅立叶红外光谱(FTIR)进行比较,讨论了这3种校正荷电效应的元素峰位选取对正确表征BCN膜结构的影响。分析结果表明:采用不同校正元素得到的BCN薄膜中元素的结合能差别很大,只有采用合适的元素校正荷电效应才能正确的表征薄膜结构;采用氩校正结合能得到的键结构拟合结果最接近薄膜的真实结构,该方法适用于溅射气氛中含Ar气的BCN膜,且对分析膜内结构同样有效;采用污染碳法和沉积单层金校正的结合能与真实值偏差较大。

The structure of BCN amorphous nano-films were studied by XPS. The characteristic peak of three elements of Ar, contamination carbon and deposited monolayer Au were considered as reference peak to correct the shift of the XPS spectra caused by charging effect during the XPS analysis process, and the results of XPS and FTIR analyses were compared to estimate the correctness of this method. The investigation results indicated that the calculated binding energy of BCN film depends on reference peak selection, and the correct structures can be obtained when the bonding energy was adjusted by selecting appropriate characteristic peak. The bonding structures of films corrected by Ar are quite similar with the results of FTIR analysis. This method is suitable fbr analyzing BCN films prepared in At-contained sputtering atmosphere, and is also suitable for analyzing the inner structure of films. There is an obvious deviation in bonding energies between the true value and adjusted by contamination carbon or by deposited monolayer Au.