CdTe/CdS太阳电池I-V,C-V特性研究

Characteristics of CdTe solar cell device

测量了CdTe太阳电池器件从50kHz至1MHz频率范围的电容-电压特性,计算了吸收层的载流子浓度和空间电荷区的位置,电容-电压特性测试结果出现两个峰,峰特征与测试频率有关,用多结模型进行模拟分析,解释了实验结果.测量了电池从220K至300K的变温暗电流-电压特性,得出电池的反向暗饱和电流密度J0和二级管理想因子A,分析了J0,A随测量温度的变化,并讨论了电池器件的电流特性.

For increasing the efficiency of CdTe/CdS solar cells, it is important to measure the current-voltage and capacitance-voltage characteristics and then carry out a numerical simulation based on electronic measurement of CdTe and CdS thin films. In this paper, the capacitance-voltage characteristics were measured in the frequency range from 50kHz to 1MHz. The carder concentrations of the absorber layer and the space charge region width were calculated. The dark current-voltage characteristics of the CdTe solar cell were measured in the temperature range from 220K to 30OK. The saturated reverse dark current density J0 and the diode ideal factor A of the solar cells were obtained. The relations of J0 and A with temperature were discussed. The results show that the capacitance-voltage curves has two peaks and the intensities and positions of the peaks are dependent on measurement frequency. The results are simulated and explained with the multi-junction model. With decreasing temperature, the saturated reverse dark current decreases from 10^-6mAcm^-2 at room temperature to 10^-7mAcm^- 2 at 220K, and the diode ideal factor rises from 2.13 at room temperature to 9.95 at 220K.