摘要
随着无线通信、蓝牙技术、雷达及航天技术的发展,对其射频部分的技术指标要求和成本要求越来越苛刻。新型异质结器件异军突起,不断满足其要求,SiGeHBTLNA就是其中之一。基于Si的制造工艺,SiGeHBT本身就具有很好的成本优势,能有效的将CMOS电路集成到一起,并且经过不断地研究,SiGeHBT已经在技术指标上得到了突飞猛进的发展,达到了未成预料到的结果,使其对GaAs、InP等器件提出了巨大挑战,这些优点都使得它成为主流工艺,为射频不可或缺的一部分。在本文中详细地讨论了SiGeHBTLNA的基本工作原理,以及其直流特性、交流特性、噪声特性等。并讨论了SOI衬底上的SiGeHBTLNA的应用和BiCMOS工艺上SiGeHBTLNA的应用。
With the development of Radio Communicati on, Bluetooch Technology, Radar and space technology, the demands to its technical characters and cost are more and more sharp for RF section. Based on silicon（Si） fabrication methodology, SiGe has an inherent cost competitiveness and the ability to effectively integrate with CMOS circuits. Futher, technical advances in exciting and innovative technology over the past decade have allowed hetero-junction bipolar transistor（HBT） device performance to soar to unexpected heights and openly challenge more expensive technologies such as gallium arsenide（GaAs） and indium phosphide（InP）.The totality of these benefits has led to mainstream process technology and put it in all kinds of products for RF. This paper discusses on SiGe HBT LNA＇s device physics and its DC character. AC character, noise character and so on. Also discusses SiGe HBT LNA on SOI substrate and SiGe HBT LNA by using BiCMOS process.
出处
《传感器世界》
2006年第4期19-23,共5页
Sensor World
