Ga_2O_3氮化法合成GaN薄膜的研究

SYNTHESIS OF GaN FILM BY NITRIDING PROCESSING OF Ga_2O_3

采用Ga2O3与NH3在管式电炉中于高温常压下进行反应,并在硅基片上沉积GaN薄膜,研究了各种工艺参数如反应温度、NH3的流量、硅基片反应前后处理等因素对沉积GaN薄膜的影响,并通过SEM和AFM对生成物进行了分析。实验结果表明,在1125℃,NH3流量为26～30L/h时可在Si基片<111>面上沉积生成GaN薄膜。

GaN thin film have been fabricated by gas nitriding of Ga2O3 on the silicon substrate in the tube furnace. The samples were characterized by AFM and SEM. And the processing parameter such as the reaction temperature, the NH3 flow rate, and the silicon substrate processing method were investigated as well. The result indicated that the GaN particles could be deposited on the silicon 〈111〉 to form thin film with high pure Ga2O3 and NH3 at 1 125℃ with the NH3 gas flow rate of 26-30 L/ h.