Si-APD单光子探测器的全主动抑制技术

Single Photon Detector of Si-APD with Active Technology

为了缩短单光子探测器工作的死时间,提高单光子计数率,在分析单光子探测器被动抑制工作模式的基础上,针对硅雪崩光电二极管的工作特点,实验设计了精密快速的抑制电路,用以控制探测器的雪崩淬灭和电压恢复,实施了主动淬灭与快恢复相结合的全主动抑制技术。结果表明,该技术使探测器工作在更加安全高效的全主动抑制模式下,最后实验测得探测器总的死时间由原被动抑制模式下大于2μs缩短至120ns,单光子计数率由被动模式下低于1MHz上升到8MHz 以上,从而达到了提高计数率的目的,满足一些单光子高效检测和计数的需要。

In order to reduce the dead time and enhance the counting rate of single photon detector, a flexible and chronometrical circuit which controls quenching avanlanch and restoring voltage is designed on the basis of the passive mode of the detector. The circuit realizes active technology with active quenching and fast restoring. The detector can work safely and effectively in the active mode. The experiment results obtained show that the dead time of detector is about 120ns and the counting rate is greater than 8MHz, which satisfy the need of high-speed photon detector.