摘要
用增强模式伪形态高电子迁移率晶体(E-phemt)管实现直放站前端低噪声放大器,并给出整体方案。首先按要求选取电路,然后对原理电路进行线性及非线性仿真分析,模拟出电路的运行结果,最后得出PCB板的实际测量结果。
This paper realizes the front low noise amplifier （LNA） of direct amplifier station with enhancement pattern false shape high electronic mobility transistor （E-phemt）, and gives the whole plan. This paper firstly adopts suitable circuits according to the demand, then gives linear analyses and nonlinear analyses of principle circuit, simulates the operation result of the electric circuit,obtains real measurement results of PCB board.
出处
《舰船电子对抗》
2006年第2期58-61,共4页
Shipboard Electronic Countermeasure
关键词
三阶交截点
E-phemt管平衡结构
低噪声放大器
仿真
output 3RD order intercept point
enhancement pattern false high electronic mobility rate transistor balance configuration
low noise amplifer
simulation
