金属-氧化物-半导体结构电容-电压特性的扫描非线性介电显微镜表征(英文)

Observation of capacitance-voltage characteristic for Metal-Oxide-Semiconductor junction by using scanning nonlinear dielectric microscope

扫描非线性介电显微镜(SNDM)利用非线性介电效应检测电容的变化情况,分辨率达到亚纳米量级,精度达到10-22F,主要应用于材料微区的电性能研究,目前以这项技术进行的研究主要集中在铁电材料和半导体材料方面,相关的报道也较少。本研究用扫描非线性介电显微镜对集成电路中具有n型与p型掺杂的60μm×60μm区域进行二维表征,得到定点非线性电容与电压的关系曲线,并由积分得到对应的电容电压特性曲线,认为界面陷阱的作用是金属-氧化物-半导体非线性电容-电压特性曲线突变的影响因素。

The nonlinear capacitance of Metal-Oxide-Semiconductor structure was measured by scanning nonlinear dielectric microscopy, and the reason of a peak appeared in the dC/dV versus voltage curve in the range from 1.5 V to 3.0 V could be concluded to the influence of the traps at the interface of the junction.