磁泡点阵的形成条件

Forming Condition of the Bubble Array

实验研究了磁泡点阵的形成条件,发现石榴石磁泡薄膜样品在系列脉冲偏场作用下可以形成规则的泡阵,泡阵呈六角密排结构.形成泡阵的条件与脉冲偏场的幅度和脉冲宽度有关,存在一个与材料参量相关的阈值脉冲宽度,只有大于此阈值时才能够得到泡阵.对于某一直流偏场,形成泡阵的脉冲幅度不随脉冲宽度变化.直流偏场和脉冲偏场联合作用下形成泡阵的条件:脉冲幅度与直流偏场的Hb和为条泡转变场.还进一步探讨了脉冲宽度和脉冲频率对泡阵形成的影响.

The forming condition of the bubble array has been investigated. In the experiment, the regular array could be formed in garnet bubble films by a series of pulse bias field. The bubble array appears hexagonal-close-packed （hcp） structure. The forming condition of the bubble array is related with the amplitude （Hp） and the width （tp） of the series of pulse bias field. It is found that there is a threshold width （tp0） of pulse,which is related with parameter of material,the bubble array can be obtained only when rp ≥tp0. For one static bias field （Hb）, the pulse amplitude of the forming bubble does not change when tv changes. It is found that the condition of forming bubble array under the static bias field and the pulse bias field is： Hp ＋ Hb = Hsb.