摘要
采用ADS仿真分析的方法,对多标准兼容的宽带压控振荡器中广泛采用的NMOS结构和互补结构的性能差异进行了比较,分析了采用一种改进型的开关电容阵列后对多标准兼容的宽带压控振荡器的性能的提高。
This paper compares the performance of NMOS structure-based VCO design with that of the complementary VCO design by ADS simulation. It also analyzes the improvement of VCO performance through the use of an improved Switch Capacitor Array (SCA).
出处
《电子科技》
2006年第5期45-47,56,共4页
Electronic Science and Technology
关键词
压控振荡器
多标准
NMOS结构
互补结构
开关电容阵列
Voltage controlled oscillator (VCO)
multi-standard
NMOS structure, complementary structure
switch capacitor array (SCA)