掺碲InSb单晶的垂直温度梯度凝固生长法研究

Vertical Gradient Freeze Growth of Te-Doped InSb Single Crystal

本工作成功地建立一套垂直温度梯度凝固晶体生长设备，并在无氢气的气氛下生长了掺碲ＩｎＳｂ体单晶。通过霍尔效应、原子吸收谱和腐蚀等方法对掺碲ＩｎＳｂ晶体中的缺陷在宏观、微尺度上的分布进行分析。研究结果表明，在宏观尺度上碲杂质沿生长方向的分布与准静态生长的溶质分布接近，在微尺度上缺陷分布均匀，无观察到生长条纹。

A vertical gradient freeze growth apparatus successfully were set up and Te-doped InSb single crystals were grown under an atmosphere without hydrogen. By Hall effect, atomic absorption spectrochemical analysis, and etch, macro-and micro-scale distributions of defects were analyzed. It was shown that the macro-scale distribution of Te impurity in the growth direction of the as-grown crystal is close to that of quasi-equilibrium growth crystal, and the micro-scale distributions of defects were homogeneous with no growth striations in the as-grown crystals.