摘要
首次在工业75硅铁上用热丝法气相沉积出了较好的金刚石薄膜。SEM、Raman检测表明,金刚石薄膜有强烈的选择性生长。初生硅区域[含硅96wt.%]金刚石成核生长缓慢,FeSi2区域[含硅53wt-%]成核密度约高前者一个数量级以上。本文对上述现象作了初步理论分析。
High quality diamond films were deposited on 75Si-Fe substrate by hot filament chemical vapor deposition. The results of SEM and Raman spectroscopy indicated that gorwth of diamond has the intensive selectivity on the surface of 75Si-Fe substrate. Diamond pew more slowly in the region of primary silicon phase L with 96% St (Wt. ) ]. Nucleation density of diamond on the region of FeSi2 phase [with 53% St (wt. )] was higher than the former case by more than an older of magnitude. Preliminary analysis about this phenoma was given.
出处
《人工晶体学报》
EI
CAS
CSCD
1996年第2期143-146,共4页
Journal of Synthetic Crystals
关键词
热丝法
金刚石膜
沉积
CVD
hot-filament chemical vapor deposition
diamond films
75Si-Fe substrate