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热丝法CVD在75Si-Fe上沉积金刚石膜 被引量:1

Deposition Diamond Films on 75Si-Fe Substrate by HFCVD
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摘要 首次在工业75硅铁上用热丝法气相沉积出了较好的金刚石薄膜。SEM、Raman检测表明,金刚石薄膜有强烈的选择性生长。初生硅区域[含硅96wt.%]金刚石成核生长缓慢,FeSi2区域[含硅53wt-%]成核密度约高前者一个数量级以上。本文对上述现象作了初步理论分析。 High quality diamond films were deposited on 75Si-Fe substrate by hot filament chemical vapor deposition. The results of SEM and Raman spectroscopy indicated that gorwth of diamond has the intensive selectivity on the surface of 75Si-Fe substrate. Diamond pew more slowly in the region of primary silicon phase L with 96% St (Wt. ) ]. Nucleation density of diamond on the region of FeSi2 phase [with 53% St (wt. )] was higher than the former case by more than an older of magnitude. Preliminary analysis about this phenoma was given.
机构地区 清华大学机械系
出处 《人工晶体学报》 EI CAS CSCD 1996年第2期143-146,共4页 Journal of Synthetic Crystals
关键词 热丝法 金刚石膜 沉积 CVD hot-filament chemical vapor deposition diamond films 75Si-Fe substrate
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