摘要
用Φ80×60mm的铱坩埚,铱丝为籽晶,提拉法生长了Ce(0.5at.%):Lu2SiO5单晶。Lu2O3原料纯度为99.5%;得到小晶体的尺寸3×4×4mm;测量了晶体的光学激发谱和发光谱;讨论了生长大晶体的措施。
The Ce doped Lu2SiO5 scintillating crystals are grown by Czochralski method. A Ir-wire is used to seed the crystal, the purity of the start material-Lu2SiO5 is 99 .5 %. The Ce: Lu2SiO5 small crystals in dimension 3 × 4 × 4mm are obtained. The luminescence and excitationspectra are measured. It is discussed how to grow a larger crystal.
出处
《人工晶体学报》
EI
CAS
CSCD
1996年第2期175-176,共2页
Journal of Synthetic Crystals