摘要
The high frequency CV curves of MOS capacitor have been studied. It is shown that semiclassical model is a good approximation to quantum model and approaches to classical model when the oxide layer is thick. This conclusion provides us an efficient （semiclassical） model including quantum mechanical effects to do parameter extraction for ultrathin oxide device. Here the effective extracting strategy is designed and numerical experiments demonstrate the validity of the strategy.
The high frequency CV curves of MOS capacitor have been studied. It is shown that semiclassical model is a good approximation to quantum model and approaches to classical model when the oxide layer is thick. This conclusion provides us an efficient （semiclassical） model including quantum mechanical effects to do parameter extraction for ultrathin oxide device. Here the effective extracting strategy is designed and numerical experiments demonstrate the validity of the strategy.
基金
This work is partially supported by National Science Foundation of China for Distinguished Young Scholars 10225103 and 90207009.
