摘要
In2S3 nanocrystalline films are prepared on glass substrates by the spray pyrolysis technique using indium chloride and thiourea as precursors. The deposition is carried out at 350℃ on glass substrates. The films are then annealed for two hour at 200, 400, 600, and 800℃ in O2 flow. This process allows the transformation of nanocrystal In203 films from In2S3 films and the reaction completes at 600℃. These results indicate that the In2O3 film prepared by this simple thermal oxidation method is a promising candidate for electro-optical and photovoltaic devices.
In2S3 nanocrystalline films are prepared on glass substrates by the spray pyrolysis technique using indium chloride and thiourea as precursors. The deposition is carried out at 350℃ on glass substrates. The films are then annealed for two hour at 200, 400, 600, and 800℃ in O2 flow. This process allows the transformation of nanocrystal In203 films from In2S3 films and the reaction completes at 600℃. These results indicate that the In2O3 film prepared by this simple thermal oxidation method is a promising candidate for electro-optical and photovoltaic devices.
