摘要
用磁控溅射法制备了厚度20～200nm的NiFe合金薄膜。研究了热处理时间(及温度)对NiFe薄膜的电阻(电阻率)、各向异性磁电阻比和软磁性能的影响。在一定温度下,经适当时间的热处理可以减小NiFe薄膜的电阻、增大其各向异性磁电阻比,从而制备出性能较好(各向异性磁电阻比较大、温度稳定性较好)的薄膜磁性材料。
A series of annealing temperatures and times which affect the
characters of NiFe films were investigated. Samples were prepared by means of DC sputtering. Magnetoresistance is measured with four-probe. The dependance of anisotropic magnetoresistance(AMR) on annealing time,as well as temperature ,is determined from experimental data. Annealing can improve the completeness of crystalline structure,so that increases magnetoresistivity. Anisotropic magnetore-sistivity ratio of 3. 5% is obtained.
出处
《材料导报》
EI
CAS
CSCD
1996年第5期27-31,共5页
Materials Reports
