摘要
将传统的灯丝热解化学气相沉积系统改装成侧向沉积系统,并在其中进行了金刚石薄膜的正、侧向沉积。研究表明,侧向沉积的成核密度和生长率与正向沉积的情况基本相同,而侧向沉积系统中金刚石颗粒和薄膜的沉积速率要比传统的沉积系统的高,但结构更趋复杂。讨论了侧向基底对金刚石成核和生长过程的影响,深化了金刚石沉积机理的理解。
A new lateral deposition system was designed based on the tra-
ditional hot filament chemical vapor deposition. Lateral deposition of diamond crys-tals and thin films were first realised in the new system,on silicon mirror substrate surface and pretreated silicon substrate surface by diamond powder respectively. The study shown that lateral deposition of diarnonds was proceeded with almost the same nucleation density ,growth rate and almost the same morphology and quality as the normai deposition in the new lateral deposition system. The growth rate in the new system was higher than thatinold system- But the structure of diamond crystals and thin films was more complicated. The effects of lateral substrate on the deposition were found and studied. The understanding about nucleation and growth of diamond was depeened
出处
《材料导报》
EI
CAS
CSCD
1996年第6期49-52,共4页
Materials Reports
关键词
化学气相沉积
金刚石
晶粒
薄膜
Chemical vapor deposition, lateral deposition system,diamond crystals,diamond thin films