摘要
运用蒙特卡罗方法，模拟了不同条件下的物理气相淀积薄膜生长过程。在40×40个原子的简单立方单晶（100）面上，模拟计算了不同条件下所成简单立方单晶薄膜的生长情况，得出了覆盖率、成膜速率、稳定性与基体温度、蒸气压强的关系。模拟计算结果与理论和实验一致。
The simulation of physical vapor deposition by Monte Carlo method using a new physical model is presented in this paper. A simple cubic lattice growth on a smooth(100) plane has been studied. The coverage,growth rate and stability of thin film related to temperature and pressure were obtained with a scale of 40×40 atomic sites. The simulated results are basically the same as the theory and experiments of thin film growth.
出处
《真空科学与技术》
CSCD
1996年第2期94-101,共8页
Vacuum Science and Technology
关键词
物理气相淀积
计算机模拟
薄膜生长
Physical vapor deposition,Computer simulation,Monte Carlo method
