PZT/Si界面氧化反应机理及动力学研究

A STUDY OF OXIDATION REACTION ON THE INTERFACE OF PZT/Si FILM

运用俄歇电子能谱深度剖析和线形分析研究了PZT／Si界面氧化反应的机理和动力学过程。研究结果表明，在PZT／Si样品的热处理过程中，环境气氛中的氧可以透过PZT薄膜层扩散到PZT／Si界面，并与硅基底反应形成SiO2界面层。界面氧化反应由氧在PZT层和SiO2层中的扩散过程所控制。

The oxidation mechanism and kinetic processes of the interface of PZT/Si film have been studied with AES depth profile and Auger line shape analysis. The results have shown that oxygen existed in air can diffuse into the interface of PZT/Si film and react with Si substrate to form SiO2 interface layer during thermal treatment. The diffusion processes of oxygen in PZT film dominate the formation rate of SiO2, inter face layer during low-temperature treatment. Whereas,the formation rate of SiO2 interface layer is controlled by the diffusion processes of oxygen in SiO2 interface layer during high-temperature treatment. The apparent active energy of interface reaction is about 39. 1 kJ/mol.