摘要
半导体超薄层外延是超晶格与量子阱研究的技术基础。化学束外延、原子层外延、迁移增强外延、选择区域外延、激光辅助外延和低温Si外延等是在分子束外延和金属有机化学气相沉积基础上发展起来的几种新型超薄层外延技术。本文着重介绍了这些外延工艺的生长机理及其研究进展。
Ultrathin semiconductor epitaxy is the lifeblood of study on superlattice and quantum well mi crostructure. Chemical beam epitaxy,atomic layer epitaxy,migration enhanced epitaxy,selective area epitaxy,laser-assisted epitaxy and low temperature Si epitaxy are new ultrathin epitaxial techniques developed based on molecular beam epitaxy and metallorganic chemical vapor deposition. This article introduced the growth mechanism of these new epitaxial techniques and their development.
出处
《真空科学与技术》
CSCD
1996年第3期185-192,共8页
Vacuum Science and Technology
基金
河北省自然科学基金
