摘要
用俄歇电子能谱详细研究了Ti/Al2O3的界面反应。通过观察Ti的L23M23M45,L23M23M23及Al的LVV俄歇发射强度、峰形及位置随深度变化,研究Ti-O,Al-O,Ti-Al等价键结合状态,同时考虑Al不同化合态俄歇峰的化学位移。选取特征峰,进行Auger深度分析。实验表明室温下Ti/Al2O3的界面已发生反应,Al—O键被还原,元素Al在界面析出。仅在600℃以上退火样品中存在Ti—A1价键结合状态。原子浓度分布曲线显示界面反应区域随退火温度增加而变宽变高。850℃时曲线上已形成平台。平台区的成分(原子百分浓度)为53%Ti,32%Al,约12%O。界面反应产物由Ti3Al,Al与固溶O组成,同时XRD分析在850℃样品上观察到了Ti3Al相的衍射线。
In this paper the changes of Auger peaks of Ti L23M23M45,L23M23M23 and Al LVV withdepth as well as Auger depth profiling have been used to investigate the interface reaction of Ti/Al2O3, Experimental results show that at room temperature(RM),Al2O3 has been reduced by Ti and elemental Alsegregates at the interface. Ti-Al bonds exist only in the samples annealed above 600℃. The atom concentration curves have shown that the reacted region at the interface become broader and highet with the increase of annealing temperature and form a plateau in the profile of 850℃. The composition correspondingto the plateau is that: 53%Ti, 32%Al, ~ 12%O. The interface reaction products consist of Ti2Al, Al andthe dissociated O,while the Ti3Al diffraction lines have been observed by X-ray diffraction.
出处
《真空科学与技术》
CSCD
1996年第5期323-328,共6页
Vacuum Science and Technology
基金
国家自然科学基金
关键词
界面反应
俄歇电子能谱
氧化铝
陶瓷
Ti/Al_2O_3,Interface reaction, Auger electron spectroscopy