IBAD薄膜与基体界面的显微结构

INVESTIGATION ON MICROSTRUCTURE OF THE INTERFACE BETWEEN IBAD THIN FILMS AND SUBSTRATE

采用中能离子束辅助沉积（ＩＢＡＤ）技术，在单晶Ａｌ２Ｏ３（０００１）基片上沉积Ｍｏ膜，在ＧａＡＳ（００１）基片１２合成Ｆｅ１６Ｎ２薄膜用ＨＲＥＭ等研究了Ｍｏ膜－Ａｌ２Ｏ３（０００１）、Ｆｅ１６Ｎ２膜－ＧａＡｓ（００１）界面的显微结构结果表明：Ｍｏ膜的晶粒呈细小性状或纤维状，晶粒平均尺寸约８ｎｍ，Ｆｅ１６Ｎ２薄膜为等轴晶，晶粒平均尺寸约为１０ｎｍ，在Ｍｏ膜－Ａｌ２Ｏ３（０００１）界面及Ｆｅ１６Ｎ２薄膜－ＧａＡｓ（００１）界面处存在厚１０～１５ｎｍ的由基片原子及膜层原子组成的非晶过渡层在过渡层与薄膜界面处存在台阶，增加了薄膜的形核点，薄膜的致密度较高。

Molybdenum film and Fe16N2 thin film were deposited on Al2O3 (0001) and GaAs (001)substrate respectively by ion-beam assisted deposition (IBAD). The microstructure of the interface between the films and substrates were studied on atomic scale by using the cross-sectional technique and HREM. An amorphous intermediate layer of 10～15nm thickness at the interfaces was observed. The armorphous layer is composited by the atoms of the films and substrates. The steps of about 2 nm deep exist at the interface between the intermediate layer and the films, which increases the films nucleation sites and decreases the forming of interfacial voids.