摘要
采用中能离子束辅助沉积(IBAD)技术,在单晶Al2O3(0001)基片上沉积Mo膜,在GaAS(001)基片12合成Fe16N2薄膜用HREM等研究了Mo膜-Al2O3(0001)、Fe16N2膜-GaAs(001)界面的显微结构结果表明:Mo膜的晶粒呈细小性状或纤维状,晶粒平均尺寸约8nm,Fe16N2薄膜为等轴晶,晶粒平均尺寸约为10nm,在Mo膜-Al2O3(0001)界面及Fe16N2薄膜-GaAs(001)界面处存在厚10~15nm的由基片原子及膜层原子组成的非晶过渡层在过渡层与薄膜界面处存在台阶,增加了薄膜的形核点,薄膜的致密度较高。
Molybdenum film and Fe16N2 thin film were deposited on Al2O3 (0001) and GaAs (001)substrate respectively by ion-beam assisted deposition (IBAD). The microstructure of the interface between the films and substrates were studied on atomic scale by using the cross-sectional technique and HREM. An amorphous intermediate layer of 10~15nm thickness at the interfaces was observed. The armorphous layer is composited by the atoms of the films and substrates. The steps of about 2 nm deep exist at the interface between the intermediate layer and the films, which increases the films nucleation sites and decreases the forming of interfacial voids.
出处
《材料研究学报》
EI
CAS
CSCD
1996年第2期187-190,共4页
Chinese Journal of Materials Research
基金
国家自然科学基金
关键词
离子束辅助沉积
界面
显微结构
薄膜
ion-beam assisted deposition (IBAD)
interface
microstructure