摘要
用ＸｅＣｌ紫外与ＣＯ２红外复合激光化学气相沉积方法，在３４０℃硅衬底上沉积成高纯金刚石膜。
Diamond films have been synthesized by LCVD through combined effect of ultraviolet XeCl laser and infrared CO2 laser. The substrates are Si wafers. A special apparatus has been developed. The deposition conditions have been studied. Raman spectra of the films show a well-defined sharp peak at 1332cm-1 which is the characteristic of diamond. The morphology of diamond crystal of the films is very clear under SEM. It has been confirmed that the films are of high pure diamond. The threshod deposition temperature is 340t. The roles of each laser are discussed.
出处
《材料研究学报》
EI
CAS
CSCD
1996年第5期521-524,共4页
Chinese Journal of Materials Research
基金
国家自然科学基金
关键词
金刚石
激光
化学气相沉积
低温
薄膜
diamond
laser
chemical vapor deposition
low temperature
