摘要
利用二次离子质谱(SIMS)和深能级瞬态谱(DLTS)研究了TiN/n-GaAs体系。SIMS结果表明,退火后Ti的浓度剖面向砷化镓衬底略有移动,N则基本未变;DLTS观察到在Ec=0.21eV处的Ti3+(3d1)/Ti2+(3d2)单受主中心,但其浓度较EL2要小得多。根据实验结果,探讨了退火后难熔金属氮化物/n-GaAs体系电学特性改善的原因。
TiN/n-GaAs system was studied by means of SIMS and DLTS. The SIMS results indicate that Ti concentration tail penetrates a little deeper to GaAs substrate after annealing,while N exhibits no observable changes. The Ti3+ (3d1)/Ti2+ (3d2) single acceptor level at Ec= 0. 21 eV was observed,but the EL2 donor level was dominant. Combining the experimental results, a discussion is made about the reasons for the improvements of electrical performance after annealing.
出处
《真空科学与技术》
CSCD
1995年第6期368-373,共6页
Vacuum Science and Technology