TiN/n-GaAs体系界面的研究

A STUDY ON THE INTERFACE OF TiN/n-GaAs

利用二次离子质谱（SIMS）和深能级瞬态谱（DLTS）研究了TiN／n－GaAs体系。SIMS结果表明，退火后Ti的浓度剖面向砷化镓衬底略有移动，N则基本未变；DLTS观察到在Ec=0．21eV处的Ti3+（3d1）／Ti2+（3d2）单受主中心，但其浓度较EL2要小得多。根据实验结果，探讨了退火后难熔金属氮化物／n-GaAs体系电学特性改善的原因。

TiN/n-GaAs system was studied by means of SIMS and DLTS. The SIMS results indicate that Ti concentration tail penetrates a little deeper to GaAs substrate after annealing,while N exhibits no observable changes. The Ti3+ (3d1)/Ti2+ (3d2) single acceptor level at Ec= 0. 21 eV was observed,but the EL2 donor level was dominant. Combining the experimental results, a discussion is made about the reasons for the improvements of electrical performance after annealing.