掺杂对金属半导体氧化物气敏性能影响的研究

Studing of the Influence of Dopant on the Gas Sensing Property of Metal Oxide Semiconductor Gas Sensors

综述了金属氧化物半导体气敏元件的掺杂技术,探讨了掺杂作用的机理,列举了对最典型半导体气敏元件的掺杂以及掺杂对气敏元件灵敏度和选择性的影响作用。

The doping technology of metai oxide semiconductor gas sensors is commented,the mechanism of doping is studied,and the doping of the most typical semiconductor gas sensors and its influence on sensitivity and selectivity of the gas sensors is presented.