厚膜导带材料微波性能的研究

Microwave behavior of thick film conductor materials

本文讨论了国产厚膜导体材料的微波性能。用国产Au浆料和Pd—Ag浆料,通过传统的厚膜工艺,在99％Al_2O_3陶瓷基片上制作了一组特性阻抗为50欧姆的微带线。用薄膜技术制作了几条和厚膜微带线一样的薄膜微带线。使用HP8410S网络分析仪测出了频率在2～12GHz范围内各条微带线的散射参数的幅度和相位。对微带线的损耗测量值和理论值进行了比较。用台阶测试仪测绘出了微带线中心导体的截面膜厚分布图。实验结果表明:在频率8GHz下,国产Au厚膜微带线的损耗和薄膜微带线的损耗几乎相等。另外,用国产Au浆料制作了一个3dB分支线定向耦合器,器件的性能良好。

This paper deseribes the microwave behavior of domestic thick film mate-rials. The experiments carried out on a number of microstrip lines with characteristicimpendance of 50Ω. The transmission lines werefabricated using domestic Au andPd-Ag conductor pasles on 99% alumina substrates. Several indential thin filmmicrostrip lines were produced. The magnitute and phase of the scattering parametersof each pattern were measured by HP 8410S network analyzer in the frequency rangeof 2～12GHz and the data were compared to the calculated values. The cross-sectionalshape of microstrip transmission lines were also measured. The results show that thetransmission loss of domestic Au thick film is neally equal to that of thin film forfrequency up to 8GHz. In addition a 3dB branch line coupler has been fibricated using do mestic Au conductor pastes on 99% alumina substrate. Its behavior is good.