薄膜SIMOX顶层单晶硅位错的研究

STUDIES OF DISLOCATIONS IN THIN FILM SIMOX MATERIALS

通过超声搅拌的增强化学腐蚀，结合普通的光学显微镜研究了不同制备参数形成的ＳＩＭＯＸ（ＳｅｐａｒａｔｉｏｎｂｙＩｍｐｌａｎｔｅｄＯｘｙｇｅｎ）材料顶层单晶硅的位错缺陷，讨论了位错密度同ＳＩＭＯＸ制备工艺的关系。

By enhanced chemical etching with supersonic agitation, the dislocations in the superficial silicon layers of thin film SIMOX (Separation by Implanted of Oxygen) wafers which are fabricated by different parameters are studied with a normal optical microscopy. The relationship of the dislocation density and the SIMOX fabrication conditions are discussed briefly.