反应溅射法在立方织构镍基底上制备CeO_2缓冲层

Preparation of CeO_2 Buffer Layer on Cube Textured Nickel Substrate by Reactive Sputtering

采用反应溅射的方法在具有立方织构的Ni基底上制备了CeO2缓冲层。以Ar/H2混合气体为预沉积气体,有效地抑制了基底的氧化。在基片温度为650℃,气压为26Pa的条件下沉积的CeO2薄膜具有纯c轴取向。X射线θ-2θ扫描、极图分析、Φ扫描结果表明,CeO2薄膜有良好的立方织构,其Φ扫描半高宽(FWHM)为9.0°。扫描电镜观察表明,薄膜致密且没有裂纹。

The buffer layer CeO2 films were grown on cube textured metallic Ni substrates by using reactive magnetron sputtering. Ar/H2 mixed atmosphere, which effectively inhibited the formation of NiO, was used as pre-depositing gas before CeO2 films were grown in Ar and O2. At 700 ℃ under the total pressure of 26 Pa,the pure c-axis orientation film was obtained. X-ray θ-2θ scan, pole figure and Ф scan were used to observe the microstructure of the buffer layer. The results show that CeO2 film has strong cube texture and the FWHM is 9°. The CeO2 film is dense and crackfree.