摘要
提出了利用直拉硅中与氮有关的特征红外吸收峰９６３、９９６、１０８１－１及１０２７ｃｍ－１确定直拉硅中氮含量的计算公式，并进行了多种样品实测。该法克服了只用９６３ｃｍ－１峰测定直拉硅中氮使结果偏低的弊病，方法相对偏差为５％～２０％
The calculation formula for determination of nitrogen in CZ Si grown under nitrogen atmosphere by infrared absorption lines related to nitrogen at 963, 996, 1 018 and 1 027 cm -1 was given and the samples were measured with RSD 5%～20%. This method eliminated the deviation caused by using only 963 cm -1 in CZ Si.
出处
《中国有色金属学报》
EI
CAS
CSCD
1996年第2期42-44,共3页
The Chinese Journal of Nonferrous Metals
基金
硅材料国家重点实验室基金
关键词
硅
氮
红外吸收光谱法
硅单晶
含量
silicon nitrogen infrared absorption spectrometry
