摘要
随着大规模集成电路的发展,氧沉淀对硅片的机械性能和器件的电学性能,有着越来越重要的影响。本文就氧沉淀的影响因素,沉淀的数目、速率、形态、形核和长大机理,碳及其它杂质原子对氧沉淀的作用等方面的研究近况作一综合介绍。
出处
《材料科学与工程》
CSCD
1990年第2期13-19,共7页
Materials Science and Engineering
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