摘要
在玻色-哈伯德模型中考虑了次近邻耦合效应,利用平均场理论和微扰论讨论了次近邻耦合对光学晶格中 Mott绝缘相相图的影响。讨论中发现次近邻耦合影响Mott绝缘相在相空间的区域,并且次近邻耦合参数的绝对值越大,其影响越明显。
The next-nearest-neighbor hopping is considered into a Bose-Hubbard model. The effects of the next-nearestneighbor hopping on the phase diagram of the Mott insulating phase have been studied by perturbation theory and the mean field theory. The results show that the region of the Mott insulating phase on the phase space has been changed and those effects are greater as the absolute value of the next-nearest-neighbor hopping parameter increases.
出处
《天津商学院学报》
2006年第3期56-57,71,共3页
Journal of Tianjin University of Commerce
关键词
光学晶格
Mott绝缘相
次近邻耦合
相图
optical lattices
Mott insulating phase
next-nearest-neighbor hopping
phase diagram