氮化镓干法刻蚀研究进展

New Development in Dry Etching of GaN

对比了RIE,ECR,ICP等几种GaN干法刻蚀方法的特点。回顾了GaN干法刻蚀领域的研究进展。以ICP刻蚀GaN和AlGaN材料为例,通过工艺参数的优化,得到了高刻蚀速率和理想的选择比及形貌。在优化后的刻蚀工艺条件下GaN材料刻蚀速率达到340nm/min,侧墙倾斜度大于80°且刻蚀表面均方根粗糙度小于3nm。对引起干法刻蚀损伤的因素进行了讨论,并介绍了几种减小刻蚀损伤的方法。

The characteristics of RIE, ECR, ICP and so on were contrasted. The progress of GaN dry etching was reviewed. Take the etching of GaN and AIGaN using ICP as an example, high etching rates and ideal selectivity and morphology were obtained by optimizing processing conditions. At the optimal etching processing condition, the etching rates were 340nm/min, the gradient of the sidewall was bigger than 80° , and the roughness RMS were less than 3nm. The reasons of plasmainduced damage were discussed, and some means of reducing etching damage were introduced.