HF溶液中铜离子在硅片表面沉积的研究

Study on the Deposition of Copper onto Silicon Wafer Surface in HF Solution

研究了溶液中的铜离子在硅片表面的沉积情况,尝试采用几种螯合剂来减少铜在硅片表面的沉积。GFAAS的测试结果表明,HF稀溶液中加入少量螯合剂,均可以使硅片表面的金属Cu的沉积量显著减少,但不同的螯合剂效果不同,而且与溶液中螯合剂与铜形成的络合物稳定性质并不完全一致。加入螯合剂后,铜离子与螯合剂不仅在溶液中反应,而且在硅片表面形成竞争吸附,对铜离子在硅片表面的沉积量影响较大。

The deposition of copper onto the surface of silicon wafer was studied. Some chelating agents were developed to reduce copper deposition from dilute HF aqueous solution. The GFAAS results indicate that Cu contamination on silicon surface can be reduced remarkably when adding chelating agent, which could not only react with cupric ion in solution but also compete with it on adsorption of silicon wafer surface.