期刊文献+

固体透氧膜法制备金属Ta 被引量:18

PREPARATION OF METAL TANTALUM BY SOLID OXYGEN-ION MEMBRANE
下载PDF
导出
摘要 利用固体透氧膜(SOM)法进行了从Ta2O5中提取金属Ta的实验.在1150℃,外加直流电解电压3.2 V下, 以55.5%MgF2-44.5%CaF2的熔盐体系为介质,阴极为经过预烧成型的Ta2O5,阳极为氧化锆管内的碳饱和铜液.测试结果显示:Ta2O5阴极中氧含量大大降低甚至消失,Ta2O5还原为金属Ta. A method preparing Ta from Ta2O5 by using solid oxygen-ion membrane (SOM) was proposed. Experiment was carried out at 1150 ℃ and DC electrolysis potential of 3.2 V in the flux system of 55.5%MgF2-44.5%CaF2. Sintered Ta2O5 and carbon saturated liquid copper in zirconia tube were used as the cathode and the anode, respectively. The EDX measured results indicated that the content of oxygen in Ta2O5 decreased obviously even approached to the zero level and Ta2O5 was reduced to tantalum.
出处 《金属学报》 SCIE EI CAS CSCD 北大核心 2006年第5期500-504,共5页 Acta Metallurgica Sinica
基金 全国优秀博士论文作者专项基金项目 200031高等学校博士学科点专项科研基金项目 20050280014上海市科委"启明星"跟踪项目03QMH1404资助
关键词 金属Ta 固体透氧膜 电解法 tantalum, solid oxygen-ion membrane (SOM), electrolysis
  • 相关文献

参考文献10

二级参考文献17

  • 1A. K. Gupta,C. C. Chao(Bowling Green State University Bowling Green, OH 43403-0221 C. C. ChaoJacksonville State Univesity Jacksonville, AL 36265).NONNULL DISTRIBUTION OF THE LIKELIHOOD RATIO CRITERION FOR TESTING THE EQUALITY OF DIAGONAL BLOCKS WITH BLOCKWISE INDEPENDENCE[J].Acta Mathematica Scientia,1994,14(2):195-203. 被引量:5
  • 2何季麟 潘伦桃 卢振达.对钠还原钽粉微观形态的观察研究及对其物理性能的调控改进[J].TIC Bulletin,2000,100:8-8.
  • 3[1]The Economics of Tantalum. Roskill Information Services Ltd, 1999, 41.
  • 4[2]The Economics of Niobium. Roskill Information Services Ltd, 1999. 25.
  • 5[3]Harry stuart, Geoff Tither. TIC Bulletin, 1997, 4: 6.
  • 6[4]He Jilin, Pan Luntao, Lu zhenda, et al. 41th TIC Symposium, San Francisco Oct. 22nd~25th 2000. 3.
  • 7[5]George J, Korineck. TIC Bulletin, 1997, 92: 4.
  • 8[6]Toshio Nishimura, Sadao Matsumura. Proceedings of a symposium at the 36th TIC Meeting, 1995. 15.
  • 9[7]Knabe W, Keck H G. Processing High-Cap Tantalum Powders for Extreme High CV Tantalum Capacitors; the 22nd Capacitor and Resistor Technology Symposium, 2002. [17]Millmam W A. Tantalum and Niobium Technology Roadmap, the 22nd Capacitor and Resistor Technology Symposium, 2002. 33.
  • 10[8]William A, Serjak. Tantalum Availability-2000 and Beyond; the 22nd Capacitor and Resistor Technology Symposium, 2002. 17.

共引文献108

同被引文献251

引证文献18

二级引证文献118

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部