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FeCoSiB薄膜应力阻抗性能的的影响因素及提高方法

Influencing factors on stress-impedance of FeCoSiB thin films and improvement
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摘要 利用磁控溅射方法在玻璃基片上制备了F eCoS iB薄膜,溅射过程中施加一横向静磁场,并在真空中退火。实验结果表明,F eCoS iB的应力阻抗效应与制备工艺(工作气压、溅射磁场)和退火条件(退火温度、退火时间)有着非常密切的联系。当偏置磁场从60 O e增加到120 O e时,薄膜的应力阻抗从0.5%提高到了1.65%。在80 O e磁场下,薄膜经300℃、40 m in退火处理后,应力阻抗效应达1.86%。 FeCoSiB thin films weredeposited on glass substrate by magnetron sputtering process during which a transverse mangnetostatic field was applied to with post-annealing in vacuum. The results showed that the stress-impedance effect of FeCoSiB films relates closely to such deposition process parameters as working gas pressure and magnetic filed for sputtering and such annealing conditions as annealing temperature time. When the intensity of bias field increases from 60 to 120Oe, the stress-impedance of films increases from 0. 5% to 1.65%. The stress-impedance effect of films can be up to 1.8% in a 80Oe magnetic field when the films are annealed at 300℃ for 40min.
出处 《真空》 CAS 北大核心 2006年第3期25-28,共4页 Vacuum
基金 国防预研基金项目资助(项目编号:41312040503)
关键词 磁弹性薄膜 应力阻抗 溅射气压 偏置场 退火处理 magnetoelastic thin film stress-impedance working gas pressure bias field annealing
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参考文献6

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