摘要
首先简单介绍了用于离子束辅助沉积的端部霍尔离子源的工作原理,然后分析了其性能对磁场的要求,据此介绍了磁路组件的设计。最后,采用AN SY S大型有限元分析软件对一个条形的端部霍尔离子源的磁场进行了模拟计算,并与实验结果进行了比较,获得了满意的结果。通过对模拟结果的分析,获得了对该离子源磁场分布的直观深入的认识,为具体的端部霍尔离子源的改进设计提供了理论指导。
Introduces the operating principle of end-Hall ion source for ion-beam-assisted deposition and discusses what magnetic field is required by end-Hall ion source. Then, describes the design principles and methods for the magnetism system of end-Hall ion source. Moreover, the magnetic field distribution of the ion source was simulated theoretically by ANSYS software, of which the results were compared with those of experiments. It was found that these two results conform well to each other. Analyzing the simulation results, a visual insight into magnetic field of the ion source is gained, thus providing a theoretical guidance for improving the design of end-Hall ion source.
出处
《真空》
CAS
北大核心
2006年第3期55-58,共4页
Vacuum
关键词
端部霍尔离子源
离子束辅助沉积
磁场
数值模拟
end-Hall ion source
ion-beam-aided deposition
magnetic field
numerical simulation
