摘要
为了获得适合低压特种变压器、手机等用过流过热保护作用的高居里点、低电阻率的PTCR材料,在采用传统的电子陶瓷制造工艺的基础上,通过液相施主掺杂及对改性剂配方优化的方法进行了研究。当液相掺杂Sb3+的添加量为0.1%时(摩尔分数),获得了居里点tC为150℃、ρv为4.7?.cm、升阻比lg(ρmax/ρmin)为3.3的PTC材料。通过电性能测试、SEM显微结构分析和复阻抗测试,探讨了作用机理。
Doping liquid-phase donor and optimizing the proportion of other donors were used to acquire high Curie point and low resistivity PTCR material for current-limiting and temperature-limiting in low-tension transformer, mobile etc, The high performance PTCR material of which Curie point 150℃, room temperature resistivity 4.7 Ω·cm, ratio of 1g（ρmax/ρmin）= 3.3, have been obtained when x（Sb^3＋） is 0.1%. The mechanism of low resistivity is also investigated by SEM, complex impedance testing etc.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2006年第6期61-63,共3页
Electronic Components And Materials
关键词
电子技术
FTCR材料
低电阻率
液相掺杂
高居里点
electronic technology
PTCR materials
low resistivity
liquid-phase donor doping
high Curie point
