摘要
We report the performance of the first self-aligned InP/InGaAs double heterojunction bipolar transistor （DHBT） produced in China. The device has a 2μm × 12μm U-shaped emitter area and demonstrates a peak common-emitter DC current gain of over 300,an offset voltage of 0. 16V,a knee voltage of 0.6V,and an open-base breakdown voltage of about 6V. The HBT exhibits good microwave performance with a current gain cutoff fre- quency of 80GHz and a maximum oscillation frequency of 40GHz. These results indicate that this InP/InGaAs DHBT is suitable for low-voltage, low-power, and high-frequency applications.
报道了一种自对准InP/InGaAs双异质结双极晶体管的器件性能.成功制作了U型发射极尺寸为2μm×12μm的器件,其峰值共射直流增益超过300,残余电压约为0·16V,膝点电压仅为0·6V,而击穿电压约为6V.器件的截至频率达到80GHz ,最大震荡频率为40GHz .这些特性使此类器件更适合于低压、低功耗及高频方面的应用.
