摘要
采用变分方法研究GaAs/AlxGa1-xAs有限抛物量子阱中类氢杂质态能量和结合能随外电场和阱宽的变化关系.在计算中考虑了电子有效带质量和介电常数随空间坐标(或合金组分)的变化因素.结果表明,外电场对类氢杂质态能量和结合能均有明显的影响,并且这些影响随着阱宽的增大而增大.电子有效带质量和介电常数随空间坐标的变化效应使得类氢杂质态基态能量减小,结合能增大,此效应随着阱宽的增大明显变小.
The ground state and binding energy of a hydrogenic impurity as functions of the electric field and well width in a GaAs/AIxGa1-xAs PQW are investigated with the variational method. The effects of spatial dependent effective mass and spatial dependent dielectric constant are considered in the calculation. The results indicate that the effects of the external electric field on the ground state and binding energy of the hydrogenic impurity are noticeable,and they increase with increasing well width. The effects of the spatial dependent effective mass and spatial dependent dielectric constant make the ground state energy decrease and the binding energy increase. These effects decrease with increasing well width.
基金
国家自然科学基金资助项目(批准号:10364003)~~
关键词
抛物量子阱
类氢杂质态
外电场
结合能
parabolic quantum well
hydrogenic impurity
external electric field
binding energy