太赫兹Si/SiGe量子级联激光器的能带设计

Energy Band Design for a Terahertz Si/SiGe Quantum Cascade Laser

使用nextnano^3模拟软件计算Si／Si1-xGex／Si量子阱的能带结构，对Si／SiGe量子级联激光器有源区的能带结构进行设计，结果表明使用Ge组分为0．27～0．3，量子阱宽度为3nm的SiGe合金与垒宽为3nm的Si层构成对称应变级联异质结构，有利于优化THz Si／SiGe量子级联激光器结构。

The eigenenergies of confined states in Si/SiGe/Si quantum wells are calculated with nextnano^3 software for the design of terahertz Si/SiGe QCLs. The results indicate that the structure of the Si/SiGe quantum cascade may be optimized by using a strain-symmetric heterostructure consisting of a Si1-xGex （0.27〈x〈0.3） well with a width of 3nm and a Si barrier with a width of 3nm.