摘要
利用甩胶方法在导电玻璃上分别制得单一的聚烷基噻吩并在其中掺杂不同量的聚乙烯咔唑的有机发光层,再用真空蒸发方法将铝沉积在这些有机层上作为发光二极管的负极,选择合适的掺杂比,电致发光二极管在电压为5V、电流密度为30mA/cm2时就有光输出.这一结果表明,掺杂具有空穴特性的聚乙烯咔唑对增强短烷基侧链的聚烷基噻吩电致发光强度是一种有效的方法.
The orgsnic electroluminescent (EL) diodes with one-layer poly (3-alkylthiophene)(PAn=8T) and PAn=8T doped with various amounts of Poly (N-vinylcarbazole) (PVK) (PAn=8T/PVK) as EL emitting layer sandwiched between an indium/tin oxide (ITO) and an aluminium electrode are fsbricated by spin coating onto ITO, respectively. The PAn=8T/PVK EL diode emits red light for the better molar ratio of PAn=8 to PVK at 5 V corresponding at current density as low as 30 mA/cm2 for the first time, indicating that the doped p-type PVK polymer in PAn=8T is an effective methed to enhance shorter alkyle side chain poly(3-alkythiophene) EL intensity.
出处
《东南大学学报(自然科学版)》
EI
CAS
CSCD
1996年第1期36-39,共4页
Journal of Southeast University:Natural Science Edition
基金
国家自然科学基金
博士点基金