摘要
采用SOL-GEL方法分别在Si和含有SiO2的衬底上制备出PZT铁电薄膜,并获得了MFS和MFOS结构.利用MOS结构常用的C-V特性分析方法,对MFS和MFOS结构进行了高频C-V特性测试分析,研究了F/(O)S的界面特性,结果表明,金属/PZT/SiO2/Si的MFOS结构具有较低的界面态,可实现极化存储,并可望制成铁电场效应晶体管.
MFOS structures were obtained with the PZT film prepared directly by the SOL-GELmethod on st substrates or on those with SiO2 content,By making a C-V hysteresis analysis,the simplest and most common means to study the M-O-S structure,the interface properties of the F/(O)S structure of metal/PZT/SiO2 were studied. Experimental results show that the MFOS structure of metal/PZT/SiO2/is in lower interface state and capable of achieving polarization induced memorization and hopefully of forming FFET.
出处
《华中理工大学学报》
CSCD
北大核心
1996年第1期79-81,共3页
Journal of Huazhong University of Science and Technology
基金
国家863高科技计划资助
关键词
场效应晶体管
MFOS结构
C-V特性
铁电薄膜
s: ferroelectric-field-effect transistor
MFOS structure
C-V characteristic
polarizationinduced memorization