MFS和MFOS结构的C－V特性研究

On the C-V Characteristics of the MFS and MFOS Structures

采用ＳＯＬ－ＧＥＬ方法分别在Ｓｉ和含有ＳｉＯ２的衬底上制备出ＰＺＴ铁电薄膜，并获得了ＭＦＳ和ＭＦＯＳ结构．利用ＭＯＳ结构常用的Ｃ－Ｖ特性分析方法，对ＭＦＳ和ＭＦＯＳ结构进行了高频Ｃ－Ｖ特性测试分析，研究了Ｆ／（Ｏ）Ｓ的界面特性，结果表明，金属／ＰＺＴ／ＳｉＯ２／Ｓｉ的ＭＦＯＳ结构具有较低的界面态，可实现极化存储，并可望制成铁电场效应晶体管．

MFOS structures were obtained with the PZT film prepared directly by the SOL-GELmethod on st substrates or on those with SiO2 content,By making a C-V hysteresis analysis,the simplest and most common means to study the M-O-S structure,the interface properties of the F/(O)S structure of metal/PZT/SiO2 were studied. Experimental results show that the MFOS structure of metal/PZT/SiO2/is in lower interface state and capable of achieving polarization induced memorization and hopefully of forming FFET.