PZT／SiO_2／Si界面的XPS分析

A Study of the Interface of the PZT/SiO_2/SiStructure with XPS Spectra

采用ＳＯＬ－ＧＥＬ工艺在ＳｉＯ２／Ｓｉ衬底上制备了铁电薄膜，对ＰＺＴ／ＳｉＯ２／Ｓｉ结构进行了ＸＰＳ分析，结果表明，在ＰＺＴ铁电薄膜和硅衬底之间加ＳｉＯ２使Ｆ／Ｓ界面得到了改善．

A study of the PZT/SiO2/Si structure with XPS spectra has been made. Experimental results show that a SiO2 layer of a definite thickness between the St and PZT films prepared by the SolGel technique functions as a buffer, and no diffusion of elements in PZT to the St substrate is found,such as that occurring in the interface of PZT/Si accompanied by a reaction with the substrate.The F/(O)S interface is improved by the prevention of Ph,Ti and O elements from diffusing into the interface with SiO2.