期刊文献+

影响牺牲层腐蚀速率的因素研究 被引量:3

Study of the Factors Affecting the Sacrificial Layer’s Etching Rate
下载PDF
导出
摘要 精确预测腐蚀速率对于避免过腐蚀和节省时间,从而提高MEMS器件加工的效率具重大意义。通过改变牺牲层材料、腐蚀液浓度、温度和牺牲层结构来改变腐蚀速率是常用的方法。在前人腐蚀模型基础上考虑扩散系数是浓度和温度的函数,腐蚀速率常数是温度的函数,得到了修正模型。从修正模型中找出影响腐蚀速率的各种因素的对应参数,并对其影响腐蚀速率的机理进行详细地研究,这样就为通过修改某些因素来改变腐蚀速率提供了依据。 To predict the etching rate accurately can not only protect the structure layer from over etching, but also save the etching time. Thus it can enhance the efficiency of MEMS apparatus machining. It is a common way to alter the etching rate by changing the material of sacrificial layer, concentration of etehant, temperature or structure of sacrificial layer. A modified etching model is proposed, in which the diffusion coefficient is a function of the temperature and concentration and the etching rate constant is a function of temperature. The corresponding parameters, which affect the etching rate, are found and the mechanism is analyzed. It will provide evidence to change the etching rote.
出处 《传感技术学报》 EI CAS CSCD 北大核心 2006年第3期588-592,共5页 Chinese Journal of Sensors and Actuators
基金 国家自然科学基金资助(60476033) 国家高技术研究发展计划资助(2003AA404012 2005AA404240)
关键词 MEMS 腐蚀速率 牺牲层腐蚀 MEMS etching rate sacrificial layer etching
  • 相关文献

参考文献14

  • 1Werner Kern, Chemical Etching of Dielectrics[C]//Proceedings of the Symposium on Etching for Pattern Definition. H.Hughes and M. J. Rand, Eds. Princeton, New Jersey: The Electrochemical Society, 1976,1-18.
  • 2Liu J, Tai Y C, Lee J, Pong K C, Zohar Y and Ho C H. In Situ Monitoring and Universal Modeling of Sacrificial PSG Etching Using Hydrofluoric Acid[C]. In:Proceedings of Micro Mechanical Systems, IEEE, 1993,71-76.
  • 3Matamis G, Gogoi B, Monk D, McNeil A and Burrows V.Release Etch Modeling Analysis and the Use of Laser Scanning Microscopy for Etch Time Prediction of Micromachined Structures[C]//Proceedings of SPIE, 2000, 4174 : 267-278.
  • 4Monk D J. Controlled Structure Release for Silicon Surface Micromachining[D]. Ph.D. Dissertation, University of California at Berkeley, Department of Chemical Engineering(1993).
  • 5Judge J S. The Etching of the Film Dielectric Materials[C].//Proceedings of the Symposium on Etching for Pattern Definition. H. G. Hughes and M. J. Rand, Eds. Princeton, New Jersey: The Electrochemical Society, 1976: 19-36.
  • 6Tenney A S, Ghezzo M. Etch Rates of Doped Oxides in Solution of Buffered HF[J]. Journal of the Electrochemical Society, 1973, 120(8): 1091-1095.
  • 7Cobianu C and Pavelescu C. An Etch-Rate Study of Thermally Annealed LTCVD SiO2 Films as a Function of Initial Deposition Conditions [J]. Journal of Materials Science Letters,1984, 3:979-982.
  • 8Hall L. Etch Rate Characterization of Silane Silicon Dioxide Films[J]. Journal of the Electrochemical Society, 1971, 118(9): 1506-1507.
  • 9Shioya Y, Maeda M. Comparison of Phosphosilicate Glass Films Deposited by Three Different Chemical Vapor Deposition Methods[J]. Journal of the Electrochemical Society,1986, 133(9): 1943-1950.
  • 10Eaton W P, Smith J H, Jarecki R L. Release-Etch Modeling for Complex Surface Micromachined Structures, Micromachined Devices and Components[C]//Proceedings of the SPIE,1996, 2882:1.

二级参考文献2

共引文献2

同被引文献23

  • 1石莎莉,陈大鹏,丁德勇,欧毅,景玉鹏,董立军,叶甜春.MEMS器件牺牲层腐蚀释放技术研究[J].微细加工技术,2006(6):58-62. 被引量:6
  • 2张永华,丁桂甫,李永海,蔡炳初.MEMS中的牺牲层技术[J].微纳电子技术,2005,42(2):73-77. 被引量:10
  • 3李锐.微机械可变电容制作工艺中的牺牲层释放和残余应力分析[J].现代电子技术,2006,29(12):140-143. 被引量:6
  • 4李艳辉,李伟华,周再发.基于二维扩散方程的牺牲层腐蚀模拟与仿真[J].固体电子学研究与进展,2006,26(2):269-272. 被引量:1
  • 5[1]Liu J,Tai Y C,Lee J,et al.In-situ monitoring and universal modelig of sacrificial PSG etchng using hydrofluoric acid[ C]// Proceedings of IEEE MEMS.Fort Lauderdale,Florida,1993:71-76.
  • 6[2]Monk David J,Soane David S,Howe Ronger T.Sacrificial layer SiO2 wet etching for micromachining applications[ C]//International Conference on Solid.State Sensors,Actuators and Transducers.San Farancisco,CA,1991:647-680.
  • 7[3]Matamis G,Gogoi B,Monk D,et al.Release etch modeling analysis and use of laser scanning microscopy for etch time prediction of micromachined structure[ C]//Proceedings of SHE on Micromachining and Microfabrication Process Technology Ⅵ.2000,4174:267-278.
  • 8[5]Monk David J.Controlled Structure Release for Silicon Surface Microsachining[ D].Berkeley,CA:Department of Chemical Engineering,University of California,1993.
  • 9[7]Monk David J,Soane David S,Howe Ronger T.A diffusion/chemical reaction model for HF etching of LPCvD phosphosilicate glass sacrificial layers[C]//Technical Digest:IEEE Solid State Sensor and Actuator Workshop.Hilton Head Island,SC,1992:46-49.
  • 10LIU J, TAI Y C, LEE J, et al. In-situ monitoring and universal modeling of sacrificial PSG etching using hydrofluoric acid [C]. Florida: Proceedings of the IEEE MEMS'1993, 1993: 71-76.

引证文献3

二级引证文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部